RN1908FE ((TE85L,F)
produsen:
Semikonduktor dan Penyimpanan Toshiba
Kategori:
Semikonduktor
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor Bipolar (BJT) Susunan Transistor Bipolar, Pra-Bias
Arus - Kolektor (Ic) (Maks):
100mA
Status Produk:
Aktif
Tipe Transistor:
2 NPN - Pra-Bias (Ganda)
Frekuensi - Transisi:
250MHz
Tipe pemasangan:
Permukaan Gunung
Paket:
Tape & Reel (TR)
Tape Cut (CT)
Digi-Reel®
Seri:
-
Saturasi Vce (Maks) @ Ib, Ic:
300mV @ 250µA, 5mA
Tegangan - Kerusakan Emitor Kolektor (Maks):
50V
Paket Perangkat Pemasok:
ES6
Resistor - Basis (R1):
22kOhm
Mfr:
Semikonduktor dan Penyimpanan Toshiba
Resistor - Basis Emitor (R2):
47kOhm
Arus - Batas Kolektor (Maks):
100nA (ICBO)
Daya - Maks:
100mW
Paket / Kasus:
SOT-563, SOT-666
Penguatan Arus DC (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Nomor produk dasar:
RN1908
Pengantar
Transistor Bipolar Pra-Biased (BJT) 2 NPN - Pra-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
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Kirim RFQ
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